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NJR's Smallest Schottky Power Diode in the World

The world's smallest 650V/10A silicon carbide Schottky barrier diode from NJR.

With High Heat Dissipation

New Japan Radio (NJR) has developed a 650V/10A Silicon Carbide Schottky Barrier Diode NJDCD010A065AA3PS with the world's smallest size (4.0x6.5x0.9mm) and high heat dissipation.

Low thermal resistance θjc=2.2℃/W(typ.) is achieved by the Clip Bond package. The low forward voltage VF of 1.5V (@ If = 10A) and short recovery time of 10ns (@VR=400V) reduces switching losses.

The small package not only minimizes the footprint, but also parasitic capacitances and inductances, which is ever more important in higher frequency switching applications using GaN and/or SiC devices.

Fields of Applications:

  • Output diode of PFC circuit
  • Freewheel diode
  • Other general applications

 

Your Contact Person

For more information, please contact Johannes Kornfehl.

Johannes Kornfehl Product Marketing Manager +43 186 305-149 E-MAIL