PANJIT's New 650V & 1200V SiC Schottky Diodes
With Superior Switching Performance
PANJIT Semiconductor launches the latest family of 650V and 1200V SiC Schottky Barrier Diodes, which provide superior switching performance and higher reliability over silicon-based devices.
The SiC Schottky’s have zero reverse recovery current and lower conduction losses than equivalent Si-Diodes.
Download DatasheetFeatures
- Low conduction loss
- Zero reverse recovery
- Temperature independent switching
- High surge current capability
- High ruggedness
- -55°C - 175°C
- TO-220
Your Contact Person
For more information, please contact Johannes Kornfehl.