Language

PANJIT's New 650V & 1200V SiC Schottky Diodes

PANJIT's new 650V and 1200V SiC Schottky diodes provide superior switching performance.

With Superior Switching Performance

PANJIT Semiconductor launches the latest family of 650V and 1200V SiC Schottky Barrier Diodes, which provide superior switching performance and higher reliability over silicon-based devices.

The SiC Schottky’s have zero reverse recovery current and lower conduction losses than equivalent Si-Diodes.

Download Datasheet

Features

  • Low conduction loss
  • Zero reverse recovery
  • Temperature independent switching
  • High surge current capability
  • High ruggedness
  • -55°C - 175°C
  • TO-220
PANJIT: SiC Diode 650V/10A

Your Contact Person

For more information, please contact Johannes Kornfehl.

Johannes Kornfehl Product Marketing Manager +43 186 305-149 E-MAIL